X-ray absorption fine structures ( XAFS) and X-ray excited optical luminescence ( XEOL) at the Si K and Si L3,2 edge have been used to investigate the optoelectronic properties of Silicon nanowires. 采用X射线吸收精细结构谱(XAFS)和X射线激发发光谱(XEOL),在Si的K边和L3,2边研究了硅纳米线的光电特性。
By using the X-ray diffraction ( XRD), high resolution transmission electron microscopy ( HRTEM), and fluorescence spectrophotometer, the structural, morphological and luminescence properties of the nanocrystal were investigated. 用X射线衍射仪(XRD)、高分辨透射电子显微镜(HRTEM)和荧光光谱仪分别对样品的结构、形貌和发光性能进行了研究。
In this paper, X-ray excited luminescence, thermoluminescence and photoluminescence have been investigated for La~ ( 3+)-doped PbWO_ ( 4). 探讨了不同浓度La3+掺杂对于钨酸铅晶体发光性能的影响,如热释光、X射线激发发光、光致发光等。
By means of powder X-ray diffraction, infrared spectroscopy, solid state diffuse reflectance absorption spectroscopy and luminescence studies, the successful incorporation of guest into the host was characterized. 利用粉末XRO、IR、固体扩散漫反射吸收光谱、发光研究等方法表征了客体在分子筛主体中的成功组装。
X-ray excited luminescence features of the crystal were also measured and the emission bands correspond to the transition from charge transfer state to the ground and excited state of Yb 3+ ion. 测试了Yb:YAG晶体的X射线荧光,发光峰对应于电荷迁移态到Yb3+离子的基态、激光态间的跃迁。
In the study of cerium activate the strontium aluminate, the X-ray diffraction icon and SEM photo are listed, the concentration of cerium that influence the luminescence are discussed. 在铈激活的铝酸锶基质中,我们给出了发光体的X射线衍射图和SEM图,并讨论了铈的浓度对合成物发光性的影响。
Many studies have been done on different approaches studied the density of threading dislocations of GaN, such as Transmission electron microscopy ( TEM), X-ray diffraction ( XRD), but the results which measured by these approaches are not consistency with luminescence. 国内外许多研究小组利用透射电子显微术和X射线衍射对GaN薄膜位错的研究集中在用不同的测试方法对位错密度的分析,但通过这些方法表征的位错密度与器件发光性能存在矛盾。
Measurements of X-ray diffraction ( XRD), X-ray photoelectron spectroscopy ( XPS) and luminescence brightness are made for alternating current electroluminescent ( ACEL) zinc sulfide thin film doped with erbium. 对研制的掺铒硫化锌交流电致发光薄膜,进行了表面的X射线衍射(XRD)、X射线光电子能谱(XPS)及发光亮度测量。
The samples were characterized by X-ray diffraction ( XRD), Scanning electronic microscope ( SEM), photoluminescence ( PL) and X-ray excited luminescence ( XEL) spectra. 分别以X-射线衍射(XRD)、扫描电子显微镜(SEM)、光致发光(PL)光谱及X-射线激发的发光(XEL)光谱对样品进行了表征。
A X-Ray Absorption Spectroscopy and X-Ray Excited Optical Luminescence Study of Silicon Nanowires 硅纳米线的X射线吸收谱与X射线激发发光谱研究
The luminescence uniformity of large-size PbWO_4: ( Mo, Y) and pure PbWO_4 crystals grown by modified Bridgman method was investigated through characterization on the optical transmittance, X-ray excited luminescence, light yield and irradiation damage at different distance from seed end face of large crystals. 报道了用改进的Bridgman法生长的大尺寸PbWO4:(Mo,Y)晶体发光均匀性的表征研究。
By means of chemical analysis, powder X-ray diffraction, Fourier transform infrared spectroscopy, low-temperature nitrogen adsorption-desorption technique, solid state diffuse reflectance absorption spectroscopy and luminescence studies, the prepared materials were characterized. 采用化学分析、粉末XRD、傅里叶变换红外光谱、低温N2吸附-解吸附技术、固体扩散漫反射吸收光谱和发光研究表征了制备的材料。